DS2227
Flexible NV SRAM Stik
www.dalsemi.com
FEATURES
PIN ASSIGNMENT
Flexibly organized as 128k x 32, 256k x 16,
or 512k x 8 bits
Data retention >10 years in the absence of
V CC
Nonvolatile circuitry transparent to and
independent from host system
Automatic write protection circuitry
safeguards against data loss
Separate chip enables allow access by byte,
word, or long word
Fast access times: 70 ns, 100 ns, or 120 ns
Unlimited write cycles
Read cycle time equals write cycle time
Employs popular JEDEC standard 72-position
SIMM connection scheme
Lithium energy source is electrically
disconnected to retain freshness until power is
applied for the first time
72-Pin SIP STIK
DESCRIPTION
The DS2227 Flexible NV SRAM Stik is a self-contained 4,194,304-bit nonvolatile static RAM which can
be flexibly organized as 128k x 32 bits, 256k x 16 bits, or 512k x 8 bits. The nonvolatile memory contains
all necessary control circuitry and lithium energy sources to maintain data integrity in the absence of
power for more than 10 years. The DS2227 employs the popular JEDEC standard 72-position SIMM
connection scheme requiring no additional circuitry.
OPERATION
The DS2227 Flexible NV SRAM Stik is used like any standard static RAM. All nonvolatile circuitry is
transparent to the user. The flexibility of the part is achieved by providing separate read, write, and chip
1 of 10
112099
相关PDF资料
DS2423D/T&R IC SRAM 4KBIT 6FCHIP
DS2430AP+T&R IC EEPROM 256BIT 6TSOC
DS2431GA+U IC EEPROM 1024BIT 2SFN
DS2433X-S#T IC EEPROM 4KBIT 6FCHIP
DS2433X-Z01 IC EEPROM 4KBIT 6FCHIP
DS24B33G+T&R IC EEPROM 4KBIT 2SFN
DS2502-E64+ IC OTP 1KBIT TO92-3
DS2502P-E48+T&R IC OTP 1KBIT 6TSOC
相关代理商/技术参数
DS2227-100 功能描述:IC NVSRAM 4MBIT 100NS 72SIMM RoHS:否 类别:集成电路 (IC) >> 存储器 系列:- 标准包装:150 系列:- 格式 - 存储器:EEPROMs - 串行 存储器类型:EEPROM 存储容量:4K (2 x 256 x 8) 速度:400kHz 接口:I²C,2 线串口 电源电压:2.5 V ~ 5.5 V 工作温度:-40°C ~ 85°C 封装/外壳:8-VFDFN 裸露焊盘 供应商设备封装:8-DFN(2x3) 包装:管件 产品目录页面:1445 (CN2011-ZH PDF)
DS2227-120 功能描述:IC NVSRAM 4MBIT 120NS 72SIMM RoHS:否 类别:集成电路 (IC) >> 存储器 系列:- 标准包装:150 系列:- 格式 - 存储器:EEPROMs - 串行 存储器类型:EEPROM 存储容量:4K (2 x 256 x 8) 速度:400kHz 接口:I²C,2 线串口 电源电压:2.5 V ~ 5.5 V 工作温度:-40°C ~ 85°C 封装/外壳:8-VFDFN 裸露焊盘 供应商设备封装:8-DFN(2x3) 包装:管件 产品目录页面:1445 (CN2011-ZH PDF)
DS2227-70 制造商:DALLAS 制造商全称:Dallas Semiconductor 功能描述:Flexible NV SRAM Stik
DS2228-100 功能描述:静态随机存取存储器 RoHS:否 制造商:Cypress Semiconductor 存储容量:16 Mbit 组织:1 M x 16 访问时间:55 ns 电源电压-最大:3.6 V 电源电压-最小:2.2 V 最大工作电流:22 uA 最大工作温度:+ 85 C 最小工作温度:- 40 C 安装风格:SMD/SMT 封装 / 箱体:TSOP-48 封装:Tray
DS2229 制造商:DALLAS 制造商全称:Dallas Semiconductor 功能描述:Word-Wide 8 Meg SRAM Stik
DS2229-100 制造商:未知厂家 制造商全称:未知厂家 功能描述:x16 SRAM Module
DS2229-120 制造商:未知厂家 制造商全称:未知厂家 功能描述:x16 SRAM Module
DS2229-85 功能描述:静态随机存取存储器 RoHS:否 制造商:Cypress Semiconductor 存储容量:16 Mbit 组织:1 M x 16 访问时间:55 ns 电源电压-最大:3.6 V 电源电压-最小:2.2 V 最大工作电流:22 uA 最大工作温度:+ 85 C 最小工作温度:- 40 C 安装风格:SMD/SMT 封装 / 箱体:TSOP-48 封装:Tray